J177: Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy

R. Bose, A. Adhikari, V. Burlakov, G. Liu, A. Mohammed,
D. Priante, M. Hedhili, N. Wehbe, C. Zhao, H. Yang, T. Khee, A. Goriely, O. Bakr, T. Wu, B. Ooi, O. Mohammed. Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy. ACS Energy Letters. 2018. 3. 2. 476–481.